发明名称 |
Method for detecting end point in plasma etching by impedance change |
摘要 |
A method for detecting end-point in a plasma etching process by monitoring plasma impedance changes on a time scale is disclosed. In the method, a plasma etching process is first conducted in a process chamber, while changes in a parameter of plasma impedance in the chamber occurring during the etching process is recorded in a curve on a time scale. An end-point of the plasma etching process is then defined for the etching of a specific material layer at a point where the direction of a slope of the curve changes.
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申请公布号 |
US6599759(B2) |
申请公布日期 |
2003.07.29 |
申请号 |
US20010847459 |
申请日期 |
2001.05.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YANG JEN-YUAN;CHEN TSAI-YI;LIN WEN-BIN |
分类号 |
H01J37/32;(IPC1-7):H01L21/302 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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