发明名称 |
Method for electrical interconnection employing salicide bridge |
摘要 |
A method for forming within a substrate employed within a microelectronics fabrication an electrical interconnection cross-over bridging between conductive regions separated by non-conductive regions formed within the substrate. There is formed over a substrate provided with conductive and non-conductive regions a blanket dielectric layer and a blanket polysilicon layer. After patterning the polysilicon and dielectric layers. A portion of the dielectric layer at the periphery of the polysilicon layer is etched away, leaving a gap between the polysilicon patterned layer and the underlying substrate contact region. There is formed over the substrate a layer of refractory metal and after rapid thermal annealing, there is formed a surface layer of refractory metal silicide over the surfaces of the polysilicon layer and within the gap between the polysilicon layer and the substrate, completing the electrical connection.
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申请公布号 |
US2003132521(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020292772 |
申请日期 |
2002.11.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSENG SHIH-DER;JAO KUO-HO |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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