| 摘要 |
PURPOSE: A method for fabricating a thin film transistor is provided to obtain a defect-free polysilicon layer by applying voltages to an electrode in a crystallization process, step by step. CONSTITUTION: A buffer layer(102) as an insulating layer is formed on an upper portion of a substrate(100). An amorphous silicon(104) is deposited on the entire surface of the substrate including the buffer layer. A catalytic metal(105) is deposited on the surface of the amorphous silicon. A plurality of electrodes(106) are installed at both sides of the catalytic metal. The amorphous silicon is crystallized by applying voltages to the electrodes, gradually step by step. The buffer layer is formed with the material selected from a group including SiNx, SiO2, and TEOS(Tetra Ethoxy Silane). The catalytic metal is formed with the material selected from a group including Ni, Pb, and Co.
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