METHOD FOR DEPOSITING HEUSLER ALLOY BY USING CO-SPUTTERING METHOD

摘要

PURPOSE: A method for depositing Heusler alloy by using a co-sputtering method is provided to form a thin film with an improved characteristic by depositing simultaneously ingredients of the Heusler alloy. CONSTITUTION: A deposition apparatus includes a substrate(12) loaded on a substrate holder portion(11) within a chamber(10) and a plurality of targets(13a,13b,13c) located at a target loading portion(14). Heusler alloy having a structural formula of X2YZ or XYZ is fabricated by using the deposition apparatus. The Heusler alloy is fabricated by using a co-sputtering method after each ingredient of the Heusler alloy as independent targets or binary alloy targets are loaded on the target loading portion. The temperature of the substrate holder portion is maintained at 200 to 500 degrees centigrade.