发明名称 METHOD FOR MANUFACTURING PHOTOMASK AND PATTERN EXPOSURE SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To solve such a problem that, when a pattern of a resist mask is formed with light, the exposure light passes through a glass substrate and is reflected from a stage to decrease the accuracy of pattern forming. SOLUTION: When the resist pattern is to be formed, the photomask substrate is mounted on a stage having an antireflective effect for the exposure light to form the pattern. Alternatively, the stage where the photomask is to be mounted in the exposure system is subjected to the antireflection treatment for the exposure light.</p>
申请公布号 JP2003131356(A) 申请公布日期 2003.05.09
申请号 JP20010327118 申请日期 2001.10.25
申请人 HITACHI LTD 发明人 TANAKA TOSHIHIKO;HATTORI KOJI
分类号 G03F1/68;G03F1/76;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/68
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