发明名称 METHOD FOR MAKING CRYSTALLINE THIN FILM
摘要 PROBLEM TO BE SOLVED: To realize a technique of enabling the use of a substrate having a melting temperature and a decomposition temperature lower than the certain temperatures because heat treatment or substrate heating is conventionally necessary to make a thin film of a crystalline high-melting compound such as an oxide, a nitride, or a carbide. SOLUTION: This method for making a crystalline thin film is the one in which the use of a low-melting low-decomposition-temperature substrate is possible by impinging a high-strength pulse ion beam against a high-melting compound target and building up the compound on the substrate.
申请公布号 JP2003129237(A) 申请公布日期 2003.05.08
申请号 JP20010320994 申请日期 2001.10.18
申请人 YATSUI KIYOSHI;SUEMATSU HISAYUKI;KOU IKA 发明人 YATSUI KIYOSHI;SUEMATSU HISAYUKI;KOU IKA
分类号 C23C14/46;(IPC1-7):C23C14/46 主分类号 C23C14/46
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