发明名称 |
METHOD FOR MAKING CRYSTALLINE THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To realize a technique of enabling the use of a substrate having a melting temperature and a decomposition temperature lower than the certain temperatures because heat treatment or substrate heating is conventionally necessary to make a thin film of a crystalline high-melting compound such as an oxide, a nitride, or a carbide. SOLUTION: This method for making a crystalline thin film is the one in which the use of a low-melting low-decomposition-temperature substrate is possible by impinging a high-strength pulse ion beam against a high-melting compound target and building up the compound on the substrate.
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申请公布号 |
JP2003129237(A) |
申请公布日期 |
2003.05.08 |
申请号 |
JP20010320994 |
申请日期 |
2001.10.18 |
申请人 |
YATSUI KIYOSHI;SUEMATSU HISAYUKI;KOU IKA |
发明人 |
YATSUI KIYOSHI;SUEMATSU HISAYUKI;KOU IKA |
分类号 |
C23C14/46;(IPC1-7):C23C14/46 |
主分类号 |
C23C14/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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