发明名称 Memory circuitry for programmable logic integrated circuit devices
摘要 A programmable logic device includes, in addition to the usual regions of programmable logic and the programmable interconnect, at least one region of memory which has multiple independently usable write and/or read ports (e.g., two write ports and two read ports). Every memory cell in the memory region is accessible from any of these ports. This enables the memory region to be used to provide either one relatively large memory or two somewhat smaller memories, each occupying a fraction of the full memory. In the latter case, the two memories provided can have any of many different sizes relative to one another. Many different modes or combinations of modes of operating the memory region or parts of the memory region are possible.
申请公布号 US6556502(B2) 申请公布日期 2003.04.29
申请号 US20020134886 申请日期 2002.04.26
申请人 发明人
分类号 G11C7/10;G11C8/16;G11C11/00;H03K19/177;(IPC1-7):G11C8/00 主分类号 G11C7/10
代理机构 代理人
主权项
地址