发明名称 |
Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld |
摘要 |
A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity type, opposite to the first conductivity type, is embedded. Regions of the second conductivity type are provided in the semiconductor body in a plane running substantially parallel to the surface of the surface region. The regions are in this case sufficiently highly doped that they cannot be depleted of charge carriers when a voltage is applied. |
申请公布号 |
DE19830332(C2) |
申请公布日期 |
2003.04.17 |
申请号 |
DE1998130332 |
申请日期 |
1998.07.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEBOY, GERALD;MITLEHNER, HEINZ;TIHANYI, JENOE |
分类号 |
H01L29/744;H01L21/04;H01L29/06;H01L29/08;H01L29/12;H01L29/24;H01L29/78;H01L29/80;(IPC1-7):H01L29/06;H01L29/861;H01L29/739 |
主分类号 |
H01L29/744 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|