| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the area of a capacitive element cannot be reduced to disturb the reduction in size of a semiconductor integrated circuit. SOLUTION: A booster circuit comprises a gate insulating film provided on the surface of a silicon substrate 1, a first gate electrode 5 provided on the insulating film, an interlayer insulating film provided on the electrode 5, and a second gate electrode 6 provided on the insulating film in such a manner that the electrode 5 is fixed to a reference voltage. A predetermined voltage V is applied to the part of the substrate 1 opposed to the electrode 5 and the electrode 5.
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