| 摘要 |
A Group-III nitride semiconductor light-emitting diode having an electrically conducting silicon (Si) single crystal substrate having on an upper surface thereof at least a light-emitting part having a pn-heterojunction structure composed of a Group-III nitride semiconductor, which light-emitting part is stacked via an intermediate layer composed of a metal or a semiconductor, the single crystal substrate having a back surface electrode on a back surface thereof, a surface electrode on an upper surface of the light-emitting part and a perforated part formed by eliminating the Si single crystal substrate in a region exclusive of the back surface electrode on the back surface of the single crystal substrate and a method of manufacturing thereof are disclosed.
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