发明名称 |
MEMBER FOR PLASMA ETCHING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a member for a plasma etching apparatus which has high etching resistance due to plasma and which can be used for a long time without the generation of abnormal etchings. SOLUTION: The member for the plasma etching apparatus comprises a surface covered with a film made of fluororesin or engineering plastic and having a thickness of 50μm or more and a surface roughness Ra of 1μm or less.
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申请公布号 |
JP2003086571(A) |
申请公布日期 |
2003.03.20 |
申请号 |
JP20010279080 |
申请日期 |
2001.09.14 |
申请人 |
SHINETSU QUARTZ PROD CO LTD |
发明人 |
INAGI KYOICHI;ARAKI ITSUO |
分类号 |
H01L21/302;C03C25/24;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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