发明名称 MEMBER FOR PLASMA ETCHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a member for a plasma etching apparatus which has high etching resistance due to plasma and which can be used for a long time without the generation of abnormal etchings. SOLUTION: The member for the plasma etching apparatus comprises a surface covered with a film made of fluororesin or engineering plastic and having a thickness of 50μm or more and a surface roughness Ra of 1μm or less.
申请公布号 JP2003086571(A) 申请公布日期 2003.03.20
申请号 JP20010279080 申请日期 2001.09.14
申请人 SHINETSU QUARTZ PROD CO LTD 发明人 INAGI KYOICHI;ARAKI ITSUO
分类号 H01L21/302;C03C25/24;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址