发明名称 Photomask designing method, a photomask designing apparatus, a computer readable storage medium, a photomask, a photoresist, photosensitive resin, a base plate, a microlens, and an optical element
摘要 A photomask designing method and apparatus, a computer readable storing medium, a photomask, a photoresist, a photosensitive resin, a base plate, a microlens, and an optical element. In the method, even though a desired depth of a photoresist pattern and a type of the photoresist are changed, the photomask can be easily designed. In a method of designing a photomask in which intensity of light radiated onto the photoresist is controlled with a fine pattern, that is, a congregation of fine areas respectively having predetermined light transmission factor, the resist sensitivity curve showing resist depth for the exposing amount of the employed photoresist and fine areas data corresponding to plural light transmission factors per determined halftone are previously set, and then, the depth of the resist respectively set per each of the fine areas is converted to the light exposing amount by use of the resist sensitivity curve. The converted exposing amount is further converted to the light transmission factor. The light transmission factor is replaced by the fine areas data. In such a way, a concrete fine pattern can be created.
申请公布号 US6519761(B1) 申请公布日期 2003.02.11
申请号 US20000657145 申请日期 2000.09.07
申请人 RICOH COMPANY, LTD. 发明人 SATOH YASUHIRO
分类号 G03F1/08;G03F1/14;G03F1/68;G03F7/00;G03F7/26;(IPC1-7):G06F17/50;G03F9/00;G03C3/00;G03C5/00;H01L21/00 主分类号 G03F1/08
代理机构 代理人
主权项
地址