| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide CMP abrasives capable of obtaining a highly planarized substrate by rapidly polishing, without generating polishing damages by reducing unevenness in a surface of a polishing speed, and to provide a method for polishing the substrate. SOLUTION: The method for polishing the substrate comprises steps of supplying the CMP abrasives containing cerium oxide particles, water-soluble polymer, water soluble organic fluorocompound and water, in such a manner that the surface tension is 5 mN/m to 50 mN/m for the polishing pad on the polishing platen, and polishing the surface of the substrate.</p> |
