| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to enhance the adhesive force between an upper and lower insulating layer by using APCVD(Atmospheric Pressure Chemical Vapor Deposition). CONSTITUTION: After forming metal lines(102) on a semiconductor substrate(101), the first insulating layer(103a) is formed on the entire surface of the resultant structure. The first insulating layer(103a) is changed to hydrophobicity by coating an organic solvent on the first insulating layer and removing the organic solvent using spin-dry processing. Then, the second insulating layer(104) is formed on the first insulating layer(103a) by using APCVD.
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