发明名称 |
Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same |
摘要 |
A method for enhancing the fabrication process of a self-aligned contact (SAC) structure is provided. The method includes forming a transistor structure on a surface of a substrate. The method also includes forming a dielectric layer directly over the surface of the substrate without forming an etch stop layer on the surface of the substrate. Also included in the method is plasma etching a contact hole through the dielectric layer in a plasma processing chamber. The method also includes monitoring a bias compensation voltage of the plasma processing chamber during the plasma etching process and discontinuing the plasma etching process upon detecting an endpoint signaling change in the bias compensation voltage.
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申请公布号 |
US2003000923(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20010895566 |
申请日期 |
2001.06.29 |
申请人 |
KO JUN-CHENG;TSAI YOUNG-TONG |
发明人 |
KO JUN-CHENG;TSAI YOUNG-TONG |
分类号 |
H01L21/00;H01L21/60;H01L21/768;(IPC1-7):G01R31/00;G01L21/30 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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