| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for a semiconductor device which has a dual gate electrode, containing metal silicide. SOLUTION: In the production method for the semiconductor device, with which the dual gate electrode of an MOS transistor is configured, by laminating at least two polysilicon layers or amorphous silicon layers on a semiconductor substrate and a metal silicide layer on the upper layer thereof, prior to the formation of the upper polysilicon or an amorphous silicon layer, this method is provided with a process for forming a first impurity region, with which a first impurity is doped partially on the lower polysilicon or amorphous silicon layer. |
