| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of property abnormality immediately after filter replacement in the case of growing a monocrystalline thin film in vapor phase by MOCVD method. SOLUTION: The oxygen or moisture adsorbed by a filter element 54 is removed by providing a deairing process which removes the adsorbed oxygen, moisture, etc., by providing the housing 51 of a filter device 51 with a heater 57, and heating a filter element 54 by heater 57 before use of the filter device 5. Consequently, even in case that the filter element 54 is replaced with a new article, a good quality of crystal growth is enabled immediately after it.
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