| 摘要 |
<p>PURPOSE: To obtain a semiconductor device having excellent heat cycle test characteristics, reflow crack resistance characteristics, and reduced warping by a method wherein the ratio between the contraction amount after resin sealing of a lead substrate and that of a cured resin body layer is set up within a specific range. CONSTITUTION: In a semiconductor device provided with a lead substrate 2 mounted with a semiconductor element 4, and a resin body layer 5 resin-sealed with this lead substrate 2, the ratio between the contraction amount after resin sealing and that of the cured resin body layer 5 is set within the range of 0.8-1.6. At this time, it is preferable that the contraction amount of the lead substrate 2 from sealing temperature to room temperature is 0.15-0.25%, as for the sealing resin composition used for the forming material of the cured resin body layer 5, e.g. an epoxy resin composition, the organic resin component is 5-25% of the whole. Through these procedures, the semiconductor device having excellent TCT test characteristics, reflow crack resistance characteristics and reduced warping of package to be generated by heating can be obtained.</p> |
