发明名称 Method for fabricating mgo polycrystalline thin film
摘要 A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0x10-2 Pa or lower while keeping the substrate temperature at 300° C. or lower.
申请公布号 US2002157601(A1) 申请公布日期 2002.10.31
申请号 US20010958367 申请日期 2001.10.06
申请人 IIJIMA YASUHIRO;KIMURA MARIKO;SAITO TAKASHI 发明人 IIJIMA YASUHIRO;KIMURA MARIKO;SAITO TAKASHI
分类号 C23C14/08;C23C14/46;(IPC1-7):C30B25/00;C30B23/00;C30B28/12;C30B28/14 主分类号 C23C14/08
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