发明名称 |
Method for fabricating mgo polycrystalline thin film |
摘要 |
A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0x10-2 Pa or lower while keeping the substrate temperature at 300° C. or lower.
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申请公布号 |
US2002157601(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20010958367 |
申请日期 |
2001.10.06 |
申请人 |
IIJIMA YASUHIRO;KIMURA MARIKO;SAITO TAKASHI |
发明人 |
IIJIMA YASUHIRO;KIMURA MARIKO;SAITO TAKASHI |
分类号 |
C23C14/08;C23C14/46;(IPC1-7):C30B25/00;C30B23/00;C30B28/12;C30B28/14 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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