发明名称 Toroidal plasma source for plasma processing
摘要 A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
申请公布号 US2002157793(A1) 申请公布日期 2002.10.31
申请号 US20020170827 申请日期 2002.06.12
申请人 APPLIED MATERIALS, INC. 发明人 COX MICHAEL S.;LAI CANFENG;MAJEWSKI ROBERT B.;WANAMAKER DAVID P.;LANE CHRISTOPHER T.;LOEWENHARDT PETER;SHAMOUILIAN SHAMOUIL;PARKS JOHN P.
分类号 H05H1/46;B01J19/08;C23C16/505;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H05H1/00;(IPC1-7):C23F1/00;C23C16/00 主分类号 H05H1/46
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