| 摘要 |
PROBLEM TO BE SOLVED: To provide an aligner and an exposure method, which exposes a substrate in suitable exposure conditions according to the surface shape of the substrate to result in a fine pattern formed with high precision, whereas a pattern with large steps has been formed on a transfer surface of the substrate when a pattern image formed on a mask is transferred to the transfer surface through a projection optical system set to shallow focal depth. SOLUTION: A multi-point focus position detection system 21 previously measures the shape of a transfer surface of a wafer W. A main control system 20 controls a projection optical system PL with changing at least one of control characteristics including the position of the wafer W relative to the focus position of the projection optical system PL, the tilt angle of the wafer W in a scanning direction, and the tilt angle of the wafer W in a direction perpendicular to the scanning direction according to the measurement result. The control system is changed e.g. at a large step on an exposing surface of the wafer W.
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