| 摘要 |
A semiconductor integrated circuit is manufactured by forming an insulation film on a semiconductor substrate, forming an SOI film on the insulation film, forming an oxide film on the SOI film, and forming a contact hole penetrating through the oxide film, the SOI film and the insulation film and extending partially into the semiconductor substrate. LOCOS oxide regions are formed over the semiconductor substrate. A gate oxide film is formed on side and bottom surfaces of the contact hole and over regions of the semiconductor substrate except for the LOCOS oxide regions. A gate electrode is formed on the gate oxide film. The gate oxide film is removed from part of the side surface and part of the bottom surface of the contact hole. A metal interconnection is formed to electrically connect the SOI film with the semiconductor substrate.
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