发明名称 Artificial neuron on the base of beta-driven threshold element
摘要 A synapse element consisting of a smaller number of elements utilizing common semiconductor technology, and a neuron circuit and a neuron device using the synapse elements are provided. The synapse element comprises a transistor set consisting of two MIS transistors connected in series. The first transistor adjusts the effective beta-value of the transistor set so as to correspond to the weight factor omega via voltage applied to its gate electrode, and the second transistor switches the current according to input voltage to its gate electrode, so that output of the transistor set represents synapse output omegaX. A voltage holding element and a switching element furnished to the gate of the first transistor give the neuron device a learning ability.
申请公布号 US6452237(B1) 申请公布日期 2002.09.17
申请号 US19990370939 申请日期 1999.08.09
申请人 MONOLITH COMPANY, LTD. 发明人 VARSHAVSKY VICTOR I.
分类号 G06G7/60;G06F15/18;G06N3/06;G06N3/063;G06N99/00;H01L21/8238;H01L27/088;H01L27/092;(IPC1-7):H01L29/76 主分类号 G06G7/60
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