发明名称 |
Semiconductor device having improved electrical characteristics and method of producing the same |
摘要 |
A semiconductor device is provided, which device includes a semiconductor substrate including a plurality of signal pads and ground pads, an insulating film formed on the semiconductor substrate, a conductive metal film formed on the insulating film and electrically connected to the ground pads and a plurality of first interconnection lines electrically connected to the signal pads and insulated from the conductive metal film. The conductive metal film is formed over a region including the first interconnection lines in a plan view of the semiconductor device.
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申请公布号 |
US6437432(B2) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000745742 |
申请日期 |
2000.12.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
IKUMO MASAMITSU;KAWAHARA TOSHIMI;FUKASAWA NORIO;NAGASHIGE KENICHI |
分类号 |
H01L23/52;H01L21/3205;H01L21/56;H01L21/60;H01L23/12;H01L23/522;(IPC1-7):H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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