发明名称 Semiconductor device having improved electrical characteristics and method of producing the same
摘要 A semiconductor device is provided, which device includes a semiconductor substrate including a plurality of signal pads and ground pads, an insulating film formed on the semiconductor substrate, a conductive metal film formed on the insulating film and electrically connected to the ground pads and a plurality of first interconnection lines electrically connected to the signal pads and insulated from the conductive metal film. The conductive metal film is formed over a region including the first interconnection lines in a plan view of the semiconductor device.
申请公布号 US6437432(B2) 申请公布日期 2002.08.20
申请号 US20000745742 申请日期 2000.12.26
申请人 FUJITSU LIMITED 发明人 IKUMO MASAMITSU;KAWAHARA TOSHIMI;FUKASAWA NORIO;NAGASHIGE KENICHI
分类号 H01L23/52;H01L21/3205;H01L21/56;H01L21/60;H01L23/12;H01L23/522;(IPC1-7):H01L23/52 主分类号 H01L23/52
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