| 摘要 |
In a method for producing a solid state image detector, and a solid state image detector produced according to the method, a pixel matrix, made of a semiconductor material, particularly an amorphous silicon and a scintillator layer, for converting radiation incident on the scintillator layer so that it can be processed by the pixel matrix, is composed of a number of sub-detectors that are arranged side by side and that are referred to as panels, is coated with a passivation layer, and a layer that is transparent for the radiation emitted by the scintillator layer is deposited on the passivation layer, and the scintillator layer is vaporized on the layer thereafter.
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