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发明名称
Mask repattern process
摘要
The present invention relates to an improved method for forming a UBM pad and solder bump connection for a flip-chip which eliminates at least two mask steps required in standard UBM pad forming processes when repatteming the bond pad locations.
申请公布号
US6426562(B2)
申请公布日期
2002.07.30
申请号
US20010921205
申请日期
2001.08.02
申请人
MICRON TECHNOLOGY, INC.
发明人
FARNWORTH WARREN M.
分类号
H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40
主分类号
H01L21/60
代理机构
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