| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to simplify manufacturing processes by forming a LOCOS(Local Oxidation of Silicon) and a capacitor using one mask and to improve a planarization by forming a buried-type capacitor through a trench etch. CONSTITUTION: After forming a trench by selectively etching a substrate(20), an insulating layer(21), a lower electrode layer(22), a dielectric(23) and an upper electrode layer(24) are sequentially deposited on the resultant structure. By performing a CMP(Chemical Mechanical Polishing) on the resultant structure so as to planarize to the height of the substrate(20), a buried-type capacitor is formed in the trench. Then, a gate insulating layer(25), a gate conductive layer(26) and sidewall spacers(27) are sequentially formed on the defined portion of the substrate(20). At this point, a LOCOS and a capacitor are formed using one mask, thereby reducing manufacturing processes.
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