| 摘要 |
PURPOSE: An interconnection and an interconnection connecting portion are provided to simultaneously reduce an interconnection resistance and an electromigration by forming a swollen shape on an upper surface of a damascene structured interconnection. CONSTITUTION: An interconnection and an interconnection connecting portion comprise insulating part made of a first, a second, and a third insulating layers(21,22,23) are formed on a semiconductor substrate(20), a hole formed by removing the lower portion of the insulating part for exposing a defined region of the semiconductor substrate(20), a trench having a defined interconnection pattern formed by selectively removing the upper portion of the insulating part, a barrier(24) formed in the hole and trench to contact the semiconductor substrate(20), a first conductive layer(25) having a hollowed portion completely filled into the hole and trench, and a second conductive layer is formed on only the first conductive layer(25) for forming a swollen portion at the hallowed portion of the first conductive layer(25).
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