| 发明名称 | Method of preparing self-aligned isolation regions between sensor elements | ||
| 摘要 | A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements, wherein a top portion of the deep doped region is below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with the top portion of the deep doped region. | ||
| 申请公布号 | US9401384(B2) | 申请公布日期 | 2016.07.26 |
| 申请号 | US201514877986 | 申请日期 | 2015.10.08 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Fu Shih-Chi;Tzeng Kai;Lu Wen-Chen |
| 分类号 | H01L21/331;H01L21/02;H01L27/148;H01L21/762;H01L27/146;H01L31/18 | 主分类号 | H01L21/331 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate, the method comprising: patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate; performing a first implant to form a deep doped region between the two neighboring sensor elements, wherein a top portion of the deep doped region is below a top surface of the substrate; and performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with the top portion of the deep doped region. | ||
| 地址 | TW | ||