| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and its manufacturing method wherein the film formation temperature and time can be reduced, and fine working and highly precise working are enabled. SOLUTION: In a first heat treatment stage, a first insulator thin film 6 covering a semiconductor substrate 1 and the surface of conductive material inside a contact hole 8 are flattened, precursor solution applied to the surface of a lower electrode 10 formed on the surface is heated, solvent only is eliminated, the precursor is dried, and a dielectric thin film 11 is formed. In this stage, the temperature is quickly raised, the heating temperature is kept nearly equal to the crystallization temperature of the dielectric thin film, organic matter is thermally decomposed and eliminated, and the heating is stopped when fine crystal nuclei are grown. The dielectric thin film 11 is covered with a second insulator thin film 13. A contact hole is made, in which an upper electrode 12 is formed. After the upper electrode is worked in a specific size, characteristics of a dielectric capacitor is stabilized by heating in a second heat treatment stage. The dielectric thin film is crystallized by heating for a sufficient period at a temperature higher than or equal to the crystallization temperature. |
