发明名称 Semiconductor device including capacitive element of an analog circuit
摘要 Comparing with, for example, a semiconductor device having the configuration in which the logic circuit and the DRAM cell circuit are consolidated, a semiconductor device in which an analog capacity element is installed without substantially increasing the number of the steps is provided.An analog capacity element to be installed in the DNA e11 circuit has a structure in which a lower electrode 5, a side-wall insulation film 9, and a bit line are formed using the same materials and the same patterns as those of a gate electrode 4, a dielectric film 10, and bit line, respectively.
申请公布号 US6384444(B2) 申请公布日期 2002.05.07
申请号 US20000729799 申请日期 2000.12.06
申请人 NEC CORPORATION 发明人 SAKOH TAKASHI
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/06;H01L27/10;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/04
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