Method of manufacturing SOI wafer with buried layer

摘要

A method of forming a silicon-on-insulator device having a buried layer is described. Ions are implanted into a first semiconductor substrate where it is not covered by a photoresist mask to form implanted regions. Alternatively, a silicide layer over the first semiconductor substrate is patterned to leave silicide regions. A first oxide layer is formed overlying the first semiconductor substrate whereby the implanted regions or the silicide regions form the buried layer structure. A second oxide layer is formed overlying a second semiconductor substrate. The first and second oxide layers are bonded together to form the wafer, using either the bond and etch back or the Unibond(TM) method to complete formation of an silicon-on-insulator wafer having a buried layer structure in the fabrication of an integrated circuit.