发明名称 Tap connections for circuits with leakage suppression capability
摘要 An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.
申请公布号 US2002031894(A1) 申请公布日期 2002.03.14
申请号 US20010941829 申请日期 2001.08.29
申请人 CLARK LAWRENCE T.;AMRELIA VIKAS R.;SOETAN RAPHAEL A.;HOFFMAN ERIC J.;DO TUAN X. 发明人 CLARK LAWRENCE T.;AMRELIA VIKAS R.;SOETAN RAPHAEL A.;HOFFMAN ERIC J.;DO TUAN X.
分类号 H01L23/528;H01L27/02;H01L27/118;(IPC1-7):H01L21/20 主分类号 H01L23/528
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