| 摘要 |
PURPOSE: A method for isolating a semiconductor device is provided to improve an insulation characteristic and to prevent a defect of an upper pattern, by removing the defect to prevent a void in an isolation region. CONSTITUTION: The first insulation layer is deposited on a semiconductor substrate(21). A predetermined region of the first insulation layer is removed, and the semiconductor substrate under the first insulation layer is removed by a predetermined depth to form a plurality of trenches(23). The second insulation layer is deposited on the semiconductor substrate including the trenches by a high density plasma deposition process. The second insulation layer is selectively removed to be left only inside the trench. A large quantity of nitrogen gas is sprayed to the semiconductor substrate while argon gas is sputtered to the semiconductor substrate in a horizontal direction, so that particles generated in an initial state of the second insulation layer under unstable surroundings and attached to the semiconductor substrate are eliminated.
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