THIN-FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor which uses an interlayer insulating film of high flatness. SOLUTION: In the thin-film transistor, the interlayer insulating film 5 is formed in the upper part of a semiconductor film 101, a gate insulating film 102 and a gate electrode 103; and a metal interconnection 1 is electrically connected to the semiconductor film 101 via a contact hole in the film 5. The film contains a silicon oxide film formed by using liquid silica. Since the flatness of the film 5 which is coated with the liquid silica by a spin-on method so as to be formed is high, the flatness of the thin-film transistor as a whole can be increased.