| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing Fe RAM element by which the exposing time of a cell plate node to a plasma can be shortened by simplifying steps. SOLUTION: This method for manufacturing Fe RAM element includes a first step of preparing a semiconductor substrate, a transistor, and an active region 210 composed of an element isolation region and forming a first insulating film 212 on the area 210, a second step of forming a dielectric capacitor structure on the insulating film 212, and a third step of forming a second insulating film 222 on the capacitor structure and first insulating film 212. The method also includes a fourth step of forming a photoresist film and a photoresistor pattern, a first opening, and a second opening by patterning the photoresist film, a fifth step of forming a storage node contact hole and a cell plate contact hole by patterning the second insulating film 222, and a sixth step of forming metallic wiring 226 on the second insulating film 222 and in the contact holes. |
