METHOD FOR RECESSING TUNGSTEN GATE USING OXIDATION PROCESS

摘要

PURPOSE: A method for recessing a tungsten gate using an oxidation process is provided to recess correctly a tungsten gate as much as a desired depth by using a damascene process and an oxidation process. CONSTITUTION: A tungsten gate MOSFET device having an exposed upper surface is formed by using an existing method. A part of the exposed surface of the tungsten gate(20) is oxidized. The oxidation process for the tungsten is performed by an N2O plasma process. In addition, the oxidation process for the tungsten can be performed by an O2 plasma process instead of the N2O plasma process. The N2O plasma process or the O2 plasma process is performed until a desired thickness of the tungsten oxide layer is obtained. A tungsten oxide layer(30) having a thickness of 100 to 500 angstrom is formed by performing the oxidation process.