| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a semiconductor device of which is capable of forming an extension region, a source region, and a drain region simultaneously. SOLUTION: This manufacturing method of a semiconductor device includes (a) a process of forming a gate insulation layer 20 on a semiconductor substrate 10, (b) a process of forming a gate electrode 22 on a gate insulation layer 20, (c) a process of forming extension control layers 40 on both sides of gate insulation layer 20 on the semiconductor substrate 10, and (d) a process of forming a source region 24 and a drain region 26 in the semiconductor substrate 10 by ion implantation of an impurity 80, as well as extension regions 30 underneath the extension control layers 40 in the semiconductor substrate 10 together with the source region 24 and the drain region 26.
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