发明名称 |
METHOD FOR CLEANING SEMICONDUCTOR WAFER HAVING COPPER STRUCTURE FORMED THEREON |
摘要 |
A cleaning solution and method for removing copper contaminants, slurry particles and other contaminants from the polished surfaces of copper interconnect structures are provided. The cleaning solution comprises various combinations of a plurality of the following components: a zeta potential modifier, a pH adjuster, a contamination remover and a corrosion inhibitor. A corrosion inhibitor remover also may be provided to remove the corrosion inhibitor following contamination removal with the cleaning solution. The cleaning solution components may be pre-mixed or the components may be delivered individually, either simultaneously or sequentially in any order, to the surface of a semiconductor wafer during cleaning.
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申请公布号 |
US2001052351(A1) |
申请公布日期 |
2001.12.20 |
申请号 |
US19980163582 |
申请日期 |
1998.09.30 |
申请人 |
BROWN BRIAN J.;CHANDRACHOOD MADHAVI;REDEKER FRITZ |
发明人 |
BROWN BRIAN J.;CHANDRACHOOD MADHAVI;REDEKER FRITZ |
分类号 |
B08B1/04;C11D7/06;C11D7/08;C11D7/26;C11D7/32;C11D11/00;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;(IPC1-7):C23G1/04;B08B3/08;C03C23/00;C23G1/16 |
主分类号 |
B08B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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