METHOD FOR MANUFACTURING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a dielectric layer is provided to stabilize a lower layer by annealing the lower layer before forming the dielectric layer. CONSTITUTION: A lower layer(100) is formed on a semiconductor substrate. Before a dielectric layer is formed on the lower layer(100), the surface of the lower layer(100) is pre-treated by annealing under vacuum or inert gas atmospheres so as to form a silicon oxide, a native oxide or a silicon nitride(150), thereby stabilizing the surface of the lower layer(100). The annealing process is carried out at the temperature of 650 to 950 °C. An RTA(rapid thermal annealing) is used as the annealing process.