ACTIVE MATRIX SUBSTRATE, ITS MANUFACTURING METHOD, OPTOELECTRONIC DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve yields in an active matrix substrate, its manufacturing method, an optoelectronic device and its manufacturing method by reducing initial defects and damage on an insulation layer caused by an ion implantation. SOLUTION: The method for manufacturing the active matrix substrate comprises a step to form a semiconductor layer 8 corresponding to a region being a transistor channel and a region being a first electrode 46 of storage capacitance on a substrate 41, a step to form a first insulation layer 44a on the semiconductor layer, a step to cover at least a region being the channel with a first resist 47a and to carry out first ion implantation to a region being the first electrode, a step to remove the first result, a step to form a second insulation layer 44b on the region being the channel and the region being the first electrode, a succeeding step to carry out second ion implantation with an impurity concentration different from that of the first ion implantation to the region being the channel and a step to form a gate electrode and a second electrode of the storage capacitance on the second insulation layer.