| 摘要 |
PURPOSE: To provide the formation method of an STI that prevents a divot from being formed at a wet etching stage even if a micro scratch is generated on the surface of a buried insulating film by CMP. CONSTITUTION: On the surface of a silicon oxide film 111a where a micro scratch 115 is generated by CMP, a silicon oxide film 121a made of an organic SOG film is formed. Even if a pad oxide film 102 is removed by wet etching after a silicon nitride film 103 is removed by anisotropy etching where an etching speed to the silicon oxide film is equal to that to the silicon nitride film, no divots are generated.
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