| 摘要 |
PURPOSE: To provide a highly-integrated semiconductor device which comprises a heat-resistant gate electrode and a shortened interval between the gate of a metal gate transistor and a source/drain contact. CONSTITUTION: There are provided a semiconductor substrate (11), an insulating film (12) and a gate electrode (15) provided on the semiconductor substrate, a source/drain region (53) formed at the semiconductor substrate, and the a metal oxide layer (19) selectively formed on the gate electrode. The gate electrode comprises a first metal while the metal oxide layer comprises a second metal where gibbs standard free energy is reduced more than the first metal at the formation of oxide. |
