发明名称 HEATING CHUCK OF WAFER ASHING EQUIPMENT
摘要 PURPOSE: A heating chuck of wafer ashing equipment is provided to effectively eliminate polymer exposed to plasma and adhered to a wafer in an etching process, by forming a circular groove in the heating chuck used in a conventional ashing process. CONSTITUTION: A heating chuck(300) for an ashing process is formed in semiconductor manufacturing equipment having a groove of a straight line type. A circular groove(340) is formed in an edge portion of the heating chuck. A wafer(10) is exposed to plasma in an etching process so that the circular groove formed in the heating chuck contacts a portion to which polymer is adhered.
申请公布号 KR20010088090(A) 申请公布日期 2001.09.26
申请号 KR20000012103 申请日期 2000.03.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DO HYEONG;PARK, HUI JEONG;PARK, JAE GU;PARK, JEONG TAE
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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