发明名称 |
HEATING CHUCK OF WAFER ASHING EQUIPMENT |
摘要 |
PURPOSE: A heating chuck of wafer ashing equipment is provided to effectively eliminate polymer exposed to plasma and adhered to a wafer in an etching process, by forming a circular groove in the heating chuck used in a conventional ashing process. CONSTITUTION: A heating chuck(300) for an ashing process is formed in semiconductor manufacturing equipment having a groove of a straight line type. A circular groove(340) is formed in an edge portion of the heating chuck. A wafer(10) is exposed to plasma in an etching process so that the circular groove formed in the heating chuck contacts a portion to which polymer is adhered.
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申请公布号 |
KR20010088090(A) |
申请公布日期 |
2001.09.26 |
申请号 |
KR20000012103 |
申请日期 |
2000.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DO HYEONG;PARK, HUI JEONG;PARK, JAE GU;PARK, JEONG TAE |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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