| 摘要 |
PURPOSE: Provided are polymeric compound which has a high transmittance for vacuum ultraviolet radiation of less than 300 nm and improved negative conversion-preventing effect and dry etching resistance, and which is useful as the base polymer in a resist composition, a resist material composition comprising the polymer, and a pattern-forming method using the same. CONSTITUTION: The polymeric compound comprises a fluorinated maleic anhydride and/or maleimide as a repeated unit of formula(1)a and 1b. The resist material composition comprises the polymeric compound, an organic compound, and acid generator. The pattern-forming process comprises the steps of (i) applying the resist material onto a substrate to form a coating, (ii) heat-treating the coating and exposing the coating to high energy radiation with a wavelength of less than 300 nm or electron beam through a photo-mask, and (iii) optionally heat treating the exposed coating, and developing the coating with a developer.
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