发明名称 Semiconductor laser device
摘要 A semiconductor laser device of the present invention includes: a semiconductor laser chip including an anode and a cathode; and a field effect transistor. The anode of the semiconductor laser chip is connected to the drain of the field effect transistor. The gate of the field effect transistor is connected to the drain of the field effect transistor. And the cathode of the semiconductor laser chip is connected to the source of the field effect transistor.
申请公布号 US6292500(B1) 申请公布日期 2001.09.18
申请号 US19990292013 申请日期 1999.04.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOUCHI YASUYUKI;NAKANISHI HIDEYUKI;YURI MASAAKI;YOSHIKAWA AKIO;ISHIGURO HISANORI
分类号 H01S5/00;H01S5/02;H01S5/022;H01S5/026;H01S5/042;H01S5/068;H01S5/323;(IPC1-7):H01S3/00 主分类号 H01S5/00
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