METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce variation of the progress in etching a compound semiconductor layer. SOLUTION: A metamorphic layer 9a generated at the highest part of a p-InGaAsP layer 5 is etched with etching liquid without any selectivity caused by the composition of p-InGaAsP along with a p-InGaAsP layer 5 to remove the metamorphic layer 9a, and further the surface of the p-InGaAsP layer 5 is made spotless, thus reducing the variation of the distribution of an etching rate on the same substrate in a next etching and also reducing the variation of the distribution of the etching rate also between substrates.