| 摘要 |
PURPOSE: A Read/write amplifier having vertical transistors for a DRAM memory is provided, which is inserted into even the reduced raster of 4F width in DRAM memory components since a DRAM uses the write/read circuit for refreshing information and requires an integrated write/read circuit for evaluating at least one bit line, and high integration is required for the write/read circuit on the other hand as well. CONSTITUTION: Firstly, the three metallization planes(80,81,82) are discernable, which serve for horizontal propagation of the material used in each case, for example tungsten, and from which the actual bit lines are also composed. In regions without metal, the metallization planes are composed of an insulation material. Insulation layers, for example oxide layers, are arranged between the three main metallization planes. In order to ensure the through-connection of the connections as far as the transistor plane, what are called contact holes are provided in the insulation layers, which contact holes are likewise filled with metal. This is indicated in the figure by the reference symbol(83) with regard to a first insulation layer, by the reference symbol(84) with regard to a second insulation layer and, finally, by the reference symbol(85) with regard to a third insulation layer.
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