| 摘要 |
A method of carrying out optical proximity correction in the design of a reticle for exposing a photoresist in photolithography includes generating a plurality of sets of rules reflecting the relationship between linewidth and line density on the photoresist, each set of rules corresponding to a different region of the image field of the lens, and carrying out optical proximity correction for each region of the image field making use of the corresponding set of rules. <IMAGE> |
