| 摘要 |
PURPOSE: A method for forming a photoresist pattern resistant to variations of temperature is provided. CONSTITUTION: The method includes forming an initial shape of the photoresist pattern(204b) having a contact hole over a semiconductor substrate(200) having an insulating layer, then coating the semiconductor substrate(200) with a solution(206) of high fluidity to cover the photoresist pattern(204b), then treating the photoresist pattern(204b) with heat by using deep ultraviolet to realize a gently sloping sidewall profile, and then cleaning the photoresist pattern(204b) to remove the solution(206). Preferably, a resin solution is used as the solution(206) having high fluidity. Since the photoresist pattern(204b) is covered with the solution(206) during heat treatment, the photoresist pattern(204b) is hardly influenced by variations of temperature.
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